Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection ...

ST’s galvanically isolated automotive gate driver for SiC MOSFETs and IGBTs gives flexibility to control inverters of different power ratings featuring programmable protections and diagnostics that ...

Bosch has announced its 3rd generation SiC MOSFETs, based on the company's dual-channel trench SiC architecture with lower on ...

TI introduced several new isolated gate drivers that provide monitoring and protection for high-voltage systems. The devices are claimed to be the first to offer integrated sensing features for IGBTs ...

Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection ...

GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire / -- STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST's latest robust galvanic ...